Spin coherence properties of VB- centers in ultrathin hBN layers
Jessica Tournaud
Université de Montpellier – Montpellier, France
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Spin defects with optically detectable magnetic resonances in hexagonal boron nitride (hBN) are currently attracting a deep scientific interest for the deployment of quantum sensing technologies on a two-dimensional (2D) material platform [1]. Among several optically-active spin defects recently discovered in hBN, the negatively-charged boron vacancy (VB – ) center stands out due to its wellestablished atomic structure and ease of creation by various irradiation methods. This defect features a spin triplet ground state whose electron spin resonance (ESR) frequencies can be interrogated by optical means and strongly depends on external perturbations such as magnetic fields, strain, and temperature [1,2]. Such properties make the VB – center in hBN a promising candidate for the design of a flexible 2D quantum sensing unit, that could be placed in atomic contact of any type of 2D material within a van der Waals heterostructure. Despite such appealing prospects, the properties of VB – centers embedded in ultrathin hBN layers still remain poorly documented.
In this work, we study the optical and spin properties of VB – centers in atomically-thin hBN flakes obtained by mechanical exfoliation of neutron-irradiated hBN crystals isotopically purified with 15N and 10B [3]. We first show that the ESR frequencies of VB – centers remain optically detectable in the 2D limit [4,5]. We then analyze how the spin relaxation times, T1 and T2, evolve with the hBN thickness under ambient conditions. While T1 is significantly reduced in thin flakes, the spin echo coherence time T2 is preserved and can even be improved in ultrathin films despite the nanoscale proximity of the crystal surface that usually leads to a degradation of the spin coherence properties of solid-state spin defects. This work provides important insights into the properties of VB –centers embedded in ultrathin hBN flakes, which are valuable for future developments of foil-based quantum sensing technologies.
References
[1] S. Vaidya et al., Advances in Physics: X 8, 2206049 (2023).
[2] A. Gottscholl et al., Nat. Mater 19, 540-545 (2020).
[3] T. Clua-Provost et al., Phys. Rev. Lett. 131, 126901 (2023).
[4] A. Durand et al., Phys. Rev. Lett. 131, 116902 (2023).
[5] T. Clua-Provost et al., Nano Lett. 24, 12915 (2024)
