Bimolecular and extraordinarily large Auger recombination processes in hexagonal boronnitride
Ioannis ChatzakisTexas Tech University, Lubbock, Texas, USA _______________________________________ Hexagonal boron nitride (hBN) is a wide, indirect bandgap semiconductor with great promise for optoelectronic devices in the ultraviolet and mid-infrared spectral regimes. The dynamic behavior of photogenerated carriers dominates the efficiency of optoelectronic devices. Here, we report on the dynamics of photoexcited free carriers in exfoliated…