Bulk growth of hexagonal BN from lithium-based fluxes
Siddha PimputkarLehigh University, Bethlehem, Pennsylvania, USA _______________________________________ Boron nitride (BN) is an ultra-wide bandgap semiconductor of interest to the (opto-)electronic community for applications in extreme environments due to its advantageous material properties including a high breakdown field, flexible doping, high temperature oxidation resistance, and high thermal conductivity. Structurally, BN exhibits polymorphs virtually identical to carbon,…