Tag: FETs
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Wafer-Scale Deposition of Multilayer h-BN Films on Sapphire for Integration into 2D Electronic Devices
Simonas KrotkusAIXTRON SE, Herzogenrath, Germany _______________________________________ Integration of h-BN with other two-dimensional (2D) materials allows to retain a clean van der Waals interface which plays the key role in determining performance at a device level. Multilayer h-BN films are thus desired for a number of applications in opto- and microelectronics. However, wafer-scale synthesis of h-BN…