Tag: PECVD
-
Growth of Cubic Boron Nitride by Plasma Assisted Chemical Vapor Deposition on Silicon, Silicon Carbide and Diamond Substates
Michael SpencerMorgan State University – Baltimore, Maryland, USA_______________________________________ Cubic Boron Nitride (cBN) is an ultra-wide bandgap semiconductor that has many excellent material properties, including an indirect bandgap that allows N and P type doping, high-predicted breakdown field high predicted electron saturated high thermal conductivity and material hardness second only to diamond. The indirect bandgap together…