Tag: ultrawide bandgap semiconductor
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Growth of Cubic Boron Nitride by Plasma Assisted Chemical Vapor Deposition on Silicon, Silicon Carbide and Diamond Substates
Michael SpencerMorgan State University – Baltimore, Maryland, USA_______________________________________ Cubic Boron Nitride (cBN) is an ultra-wide bandgap semiconductor that has many excellent material properties, including an indirect bandgap that allows N and P type doping, high-predicted breakdown field high predicted electron saturated high thermal conductivity and material hardness second only to diamond. The indirect bandgap together…