YoungJae Kim
Kyung Hee University – Seoul, Republic of Korea
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Nowadays, the utilization of electronic devices is increasing, various of power electronic devices are being used from low-voltage AC-DC converters used for mobile phone chargers to high-voltage converters employed in power transmission. Silicon carbide (SiC) is widely recognized as a promising material for power electronics in high-voltage applications, exhibiting an electric breakdown field value of approximately 2-6 MV/cm. In contrast, hexagonal boron nitride (hBN) demonstrates a significantly higher vertical breakdown field of 7 MV/cm. This suggests that utilizing hBN could enable the fabrication of devices capable of withstanding even greater voltage levels. We have developed a structure capable of applying a vertical electric field by alternately stacking (Multi quantum well structure) pristine hBN and carbon-doped hBN(hBN:C) samples using a mechanical exfoliation method. When electric field is applied, we observed more stable and robust Fowler-Nordheim(FN) tunneling characteristics compare to devices using only pristine hBN for tunneling layer. Moreover, we confirmed that our device stands higher than 7 MV/cm, which exceeds that of pristine.
Email: linus@khu.ac.kr