Spin-Active Quantum Emitters in hBN: Identification, Spin Photodynamics, and Applications

Xingyu Gao
Purdue University, West Lafayette, Indiana, USA _______________________________________

Hexagonal boron nitride (hBN) hosts a variety of quantum emitters with optically addressable spins, making it a promising platform for quantum technologies. In this work, we report the generation and observation of spin-active quantum emitters that exhibit the coexistence of S = 1 and S = 1/2 spin transitions, with an out-of-plane quantization axis. We present a comprehensive approach to defect identification, combining optical detection of magnetic resonance (ODMR), spin photodynamics, and numerical simulations to unravel the underlying spin and charge-state dynamics. Furthermore, we explore the potential applications of these defects in vector magnetic field sensing, leveraging the coexistence of S = 1 and S = 1/2 states. This study enhances our understanding of spin-active defects in hBN and opens new avenues for their integration into quantum technologies.

Email: gao477@purdue.edu