Vincent Jacques
Laboratoire Charles Coulomb, CNRS and University of Montpellier – Montpellier, France
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Quantum sensors based on optically-active spin defects in semiconductors have found a broad variety of applications, in both basic and applied science, due to their unprecedented combination of sensitivity, spatial resolution and ability to operate under a wide range of experimental conditions. While the most prominent example is undoubtedly the nitrogen-vacancy (NV) center in diamond, the exploration of alternative spin defects and host materials remains an active field of research worldwide. In this context, the negatively-charged boron vacancy (VB) center in hexagonal boron nitride (hBN) is currently attracting a growing interest for the development of quantum sensing and imaging technologies on a two-dimensional (2D) material platform. This point defect, which can be readily created by various irradiation methods, has a spin triplet ground level whose electron spin resonance frequencies can be measured optically under ambient conditions and strongly depends on external perturbations. In this talk, I will describe our recent research work aimed at developing quantum sensing foils based on VB centers in hBN, with a focus on their applications to magnetic imaging of van der Waals heterostructures under hydrostatic pressure.