spin defects

Abstracts

Probing broadband spin-relaxation dynamics of boron-vacany centers in hexagonal boron nitride: towards high field spin-based quantum sensing
Bynatalierbaggett March 13, 2025

Yueh-Chun WuOak Ridge National Laboratory, Oak Ridge, Tennessee, USA _______________________________________ Spin defects like the boron-vacancy center (???) in hexagonal boron nitride (hBN) have attracted significant attention in recent years for their potential applications in quantum sensing because of their ease of fabrication and their straightforward integrability with van der Waals heterostructures. The ??? ground state…

Read More Probing broadband spin-relaxation dynamics of boron-vacany centers in hexagonal boron nitride: towards high field spin-based quantum sensing
Abstracts

Spin-Active Quantum Emitters in hBN: Identification, Spin Photodynamics, and Applications
Bynatalierbaggett March 11, 2025April 22, 2025

Xingyu GaoPurdue University, West Lafayette, Indiana, USA _______________________________________ Hexagonal boron nitride (hBN) hosts a variety of quantum emitters with optically addressable spins, making it a promising platform for quantum technologies. In this work, we report the generation and observation of spin-active quantum emitters that exhibit the coexistence of S = 1 and S = 1/2…

Read More Spin-Active Quantum Emitters in hBN: Identification, Spin Photodynamics, and Applications
Abstracts

Quantum Sensors in hBN: Advantages and Applications
Bynatalierbaggett February 28, 2025March 1, 2025

Chong ZuWashington University at St. Louis – St. Louis, Missouri, USA_______________________________________ The recent discovery of optical spin defects in two-dimensional (2D) materials, such as boron-vacancy center (VB) in hexagonal boron nitride (hBN), presents a brand-new angle to construct solid-state quantum sensors. In principle, the atomic-thin structure of the host materials can enable the spin qubits to…

Read More Quantum Sensors in hBN: Advantages and Applications
Abstracts

Quantum sensing with spin defects in hexagonal boron nitride
BySarah Ross January 31, 2025March 1, 2025

Vincent JacquesLaboratoire Charles Coulomb, CNRS and University of Montpellier – Montpellier, France_______________________________________ Quantum sensors based on optically-active spin defects in semiconductors have found a broad variety of applications, in both basic and applied science, due to their unprecedented combination of sensitivity, spatial resolution and ability to operate under a wide range of experimental conditions. While…

Read More Quantum sensing with spin defects in hexagonal boron nitride
Abstracts

Quantum sensing using two-dimensional hexagonal boron nitride
BySarah Ross January 31, 2025March 1, 2025

Chunhui Rita Du Georgia Institute of Technology – Atlanta, Georgia, USA_______________________________________ Emergent color centers with optically accessible spins have attracted tremendous research interest in recent years due to their significant potential for implementing transformative quantum sensing technologies. Spin defects hosted by hexagonal boron nitride (hBN) are emerging candidates in this catalog due to their remarkable…

Read More Quantum sensing using two-dimensional hexagonal boron nitride

spin defects

Probing broadband spin-relaxation dynamics of boron-vacany centers in hexagonal boron nitride: towards high field spin-based quantum sensing

Spin-Active Quantum Emitters in hBN: Identification, Spin Photodynamics, and Applications

Quantum Sensors in hBN: Advantages and Applications

Quantum sensing with spin defects in hexagonal boron nitride

Quantum sensing using two-dimensional hexagonal boron nitride

Boron Nitride Workshop 2027

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