Large-Area Single-Crystal hBN Growth by CVD
Soo Min Kim
Sookmyung Women’s University – Seoul, Republic of Korea
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Hexagonal boron nitride (hBN) has emerged as a crucial material for next-generation nanoelectronics, optoelectronics, and quantum technologies. Its applications range from serving as an ideal dielectric substrate and encapsulation layer for 2D materials to hosting single-photon emitters for quantum communication. However, achieving large-area single-crystal (SC) hBN films via chemical vapor deposition (CVD) remains a significant challenge due to grain boundary formation and film non-uniformity. In this presentation, I will discuss recent advancements in CVD-based synthesis of wafer-scale SC hBN films. Specifically, I will highlight self-collimation and epitaxial growth techniques that enable the formation of high-quality SC monolayer hBN [1]. Additionally, I will introduce new strategies for uniform and continuous multilayer SC hBN growth on Fe substrates, addressing challenges in layer stacking and grain boundary minimization [2,3]. These breakthroughs provide a scalable approach for integrating SC hBN into 2D van der Waals heterostructures and advanced electronic applications.
Fig. 1. (a) Scheme for growth of multilayer hBN on liquid metal compund, (b) optical micrograph of the as grown multilayer hBN film, (c,d) AFM and Raman FHWM mapping (E2g) images of the transferred multilayer hBN film, (e) scheme for the preparations of graphene (Gr) field effect transistor arrays, (e) distributed plots of the carrier mobilities of Gr FETs.
References
[1] J. S. Lee and S. M. Kim et al Science, 362, 817 (2018)
[2] S. M. Kim et al. Nature Communications 6, 8662 (2015)
[3] H.Y. Ko and S. M. Kim et al. 2D Materials, 8, 034003 (2021)
Email: soominkim@sookmyung.ac.kr